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  2006. 1. 13 1/2 semiconductor technical data KDS166F silicon epitaxial planar diode revision no : 0 ultra high speed switching application. features small package : tfsv. low forward voltage. fast reverse recovery time. small total capacitance. maximum rating (ta=25 ) electrical characteristics (ta=25 ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 2 a power dissipation p d * 100 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.60 - v v f(2) i f =10ma - 0.72 - v f(3) i f =100ma - 0.90 1.20 reverse current i r v r =80v - - 0.5 a total capacitance c t v r =0v, f=1mhz - 0.9 3.0 pf reverse recovery time t rr i f =10ma - 1.6 4.0 ns * : unit rating. total rating=unit rating 1.5 dim millimeters a b b1 a1 b1 c tfsv 1.0 0.05 0.7 0.05 1.0 0.05 0.8 0.05 0.35 0.15 0.05 0.38+0.02/-0.04 b d h t 0.1 0.05 + _ + _ + _ + _ + _ + _ a h a1 c c d t 1. anode 1 2. n.c 3. anode 2 4. cathode 2 5. cathode 1 marking sc lot no. 12 3 5 4 d1 d2
2006. 1. 13 2/2 KDS166F revision no : 0 1 0.1 reverse voltage v r (r) c t - v r reverse current i r ( a) 10 0 reverse voltage v r (v) total capacitance c t (pf) 0 i r - v r i f - v f forward voltage v f (v) 0 10 forward current i f (ma) 0.2 0.4 0.6 0.8 1.0 1.2 -2 -1 10 2 10 3 10 10 1 ta=100 c ta=25 c ta=-25 c 20 40 60 80 -3 -2 10 -1 10 1 10 ta=100 c ta=75 c ta=50 c ta=25 c 0.4 0.8 1.2 1.6 2.0 3 10 30 100 f=1mhz ta=25 c t rr - i f forward current i f (ma) 0.1 0.5 reverse recovery time t rr (ns) 0.3 1 3 10 30 100 1 3 5 10 30 50 100 ta=25 c fig. 1 0.3 fig. 1. reverse recovery time (t rr ) test circuit 50 ? 2k ? e 50 ? input waveform input 0.01 f dut output sampling oscilloscope (r =50 ? ) in waveform 0.1 i r 0 f i =10ma rr t pulse generator (r =50 ? ) out 50ns -6v 0 i r


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